您的位置: 标准下载 » 美军标 MIL » MIL-STD »

MIL-STD-883H

时间:2024-04-29 22:30:49 来源: 标准资料网 作者:标准资料网 阅读:9087
下载地址: 点击此处下载
MIL-STD-883H, DEPARTMENT OF DEFENSE TEST METHOD STANDARD: MICROCIRCUITS (26 FEB 2010)., This standard establishes uniform methods, controls, and procedures for testing microelectronic devices suitable for use within Military and Aerospace electronic systems including basic environmental tests to determine resistance to deleterious effects of natural elements and conditions surrounding military and space operations; mechanical and electrical tests; workmanship and training procedures; and such other controls and constraints as have been deemed necessary to ensure a uniform level of quality and reliability suitable to the intended applications of those devices. For the purpose of this standard, the term "devices" includes such items as monolithic, multichip, film and hybrid microcircuits, microcircuit arrays, and the elements from which the circuits and arrays are formed. This standard is intended to apply only to microelectronic devices. The test methods, controls, and procedures described herein have been prepared to serve several purposes: a. To specify suitable conditions obtainable in the laboratory and at the device level which give test results equivalent to the actual service conditions existing in the field, and to obtain reproducibility of the results of tests. The tests described herein are not to be interpreted as an exact and conclusive representation of actual service operation in any one geographic or outer space location, since it is known that the only true test for operation in a specific application and location is an actual service test under the same conditions. b. To describe in one standard all of the test methods of a similar character which now appear in the various joint-services and NASA microelectronic device specifications, so that these methods may be kept uniform and thus result in conservation of equipment, manhours, and testing facilities. In achieving this objective, it is necessary to make each of the general tests adaptable to a broad range of devices. c. To provide for a level of uniformity of physical, electrical and environmental testing; manufacturing controls and workmanship; and materials to ensure consistent quality and reliability among all devices screened in accordance with this standard.
下载地址: 点击此处下载
基本信息
标准名称:半导体分立器件 2DW230-236型硅电压基准二极管详细规范
英文名称:Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2DW230~236
中标分类: 电子元器件与信息技术 >> 半导体分立器件 >> 半导体二极管
发布部门:中华人民共和国信息产业部
发布日期:2002-10-30
实施日期:2003-03-01
首发日期:1900-01-01
作废日期:1900-01-01
提出单位:中华人民共和国信息产业部
归口单位:信息产业部电子第四研究所
起草单位:国营第八七三厂
出版社:工业电子出版社
出版日期:2003-03-01
页数:9页
适用范围

本规范规定了2DW230~236型硅电压基准二极管的详细要求。本规范适用于器件的研制、生产和采购。

前言

没有内容

目录

没有内容

引用标准

没有内容

所属分类: 电子元器件与信息技术 半导体分立器件 半导体二极管
基本信息
标准名称:纱线疵点的分级与检验方法
中标分类: 纺织 >> 纺织综合 >> 基础标准与通用方法
替代情况:调整为FZ/T 01050-1997
发布日期:
实施日期:1985-10-01
首发日期:
作废日期:
出版日期:
页数:4页
适用范围

没有内容

前言

没有内容

目录

没有内容

引用标准

没有内容

所属分类: 纺织 纺织综合 基础标准与通用方法